| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 30.0 V |
| Case/Package | T-1 |
| Output Voltage | ≤30.0 V |
| Number of Positions | 2 Position |
| Wavelength | 935 nm |
| Viewing Angle | 25° |
| Peak Wavelength | 935 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 100 mW |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Material | Silicon |
| Size-Height | 5.08 mm |
| Operating Temperature | -40℃ ~ 100℃ (TA) |
The OP505D is an Infrared Selected Silicon NPN Phototransistor moulded in blue tinted epoxy package. The narrow receiving angle provides excellent on-axis coupling. This device is 100% production tested using infrared light for close correlation with Optek"s GaAs and GaAIAs emitters.
● Small package size ideal for space-limited applications
● 0.050" (1.27mm) Lead spacing
TT Electronics/Optek Technology
2 Pages / 0.34 MByte
TT Electronics/Optek Technology
11 Pages / 1.61 MByte
TT Electronics/Optek Technology
OP505 Series 935nm 30V 4.3mA Blue NPN Silicon Phototransistor - T-1
TT Electronics/Optek Technology
OPTEK TECHNOLOGY OP505B Phototransistor, 935nm, 0.1W(1/10W), 2Pins, T-1 (3mm)
TT Electronics/Optek Technology
OPTEK TECHNOLOGY OP505C Phototransistor, 935nm, 0.1W(1/10W), 2Pins
TT Electronics/Optek Technology
OPTEK TECHNOLOGY OP505D Phototransistor, 935nm, 0.1W(1/10W), 2Pins, T-1 (3mm)
TT Electronics/Optek Technology
IR phototransistor [Optek] OP 505W IR phototransistor
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