TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 18.0 V |
Case/Package | TO-99-8 |
Supply Current | 5 mA |
Number of Circuits | 2 Circuit |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Power Dissipation | 0.5 W |
Common Mode Rejection Ratio | 96 dB |
Input Offset Drift | 500 nV/K |
Bandwidth | 2 MHz |
Slew Rate | 2.00 V/μs |
Gain Bandwidth Product | 2 MHz |
Input Offset Voltage | 50 µV |
Input Bias Current | 1.2 pA |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -25 ℃ |
Gain Bandwidth | 2 MHz |
Power Dissipation (Max) | 500 mW |
Minimum CMRR Range | 96 dB |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Operating Temperature | -25℃ ~ 85℃ |
The OPA2111BM is a high precision monolithic dielectrically isolated FET (Difet) Operational Amplifier for use with detector arrays. Outstanding performance characteristics allow its use in the most critical instrumentation applications. Noise, bias current, voltage offset, drift, open-loop gain, common-mode rejection and power supply rejection are superior to BIFET® amplifier. Very low bias current is obtained by dielectric isolation with on-chip guarding. Laser trimming of thin-film resistors gives very low offset and drift. Extremely low noise is achieved with patented circuit design techniques. A cascade design allows high precision input specifications and reduced susceptibility to flicker noise. Standard dual op amp pin configuration allows upgrading of existing designs to higher performance levels.
TI
The OPA2111 is a high precision monolithic dielectrically isolated FET (Difet) operational amplifier. Outstanding per...
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Operational Amplifier, Dual, 2 Amplifier, 2MHz, 2V/µs, ± 5V to ± 18V, TO-99, 8Pins
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Operational Amplifier, Dual, 2 Amplifier, 2MHz, 2V/µs, ± 5V to ± 18V, TO-99, 8Pins
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Operational Amplifier, Dual, 2 Amplifier, 2MHz, 2V/µs, ± 5V to ± 18V, DIP, 8Pins
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