| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 15.0 V |
| Case/Package | SOIC-8 |
| Supply Current | 790 µA |
| Number of Circuits | 2 Circuit |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Common Mode Rejection Ratio | 130 dB |
| Input Offset Drift | 100 nV/K |
| Bandwidth | 1 MHz |
| Slew Rate | 800 mV/μs |
| Gain Bandwidth Product | 1 MHz |
| Input Offset Voltage | 10 µV |
| Input Bias Current | 500 pA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Gain Bandwidth | 1 MHz |
| Minimum CMRR Range | 130 dB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 4.9 mm |
| Size-Width | 3.91 mm |
| Size-Height | 1.58 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The OPA2277U is a high precision Operational Amplifier which replaces the industry standard OP-177. Offers improved noise, wider output voltage swing and are twice as fast with half the quiescent current. Features include ultralow offset voltage and drift, low bias current, high common-mode rejection and high power supply rejection. Single, dual and quad versions have identical specifications for maximum design flexibility. High performance is maintained as the amplifiers swing to their specified limits. This operational amplifier is easy to use and free from phase inversion and the overload problems found in some other operational amplifiers. Stable in unity gain and provide excellent dynamic behaviour over a wide range of load conditions. Dual and quad versions feature completely independent circuitry for lowest crosstalk and freedom from interaction, even when overdriven or overloaded.
● 10µV Ultralow offset voltage
● ±0.1µV/°C Ultralow drift
● 140dB High CMMR
● 130dB Power supply rejection
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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