| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Output Current | 20 mA |
| Supply Current | 150 µA |
| Number of Circuits | 2 Circuit |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Common Mode Rejection Ratio | 66 dB |
| Input Offset Drift | 1.00 µV/K |
| Bandwidth | 3 MHz |
| Slew Rate | 1.50 V/μs |
| Gain Bandwidth Product | 3 MHz |
| Thermal Shutdown | No |
| Input Offset Voltage | 500 µV |
| Input Bias Current | 0.2 pA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Gain Bandwidth | 3 MHz |
| Minimum CMRR Range | 66 dB |
| Supply Voltage | 1.8V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 1.8 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The OPA2314AID is a low-noise Operational Amplifier represents a new generation of low-power, general-purpose CMOS amplifier. Rail-to-rail input and output swings, low quiescent current (150µA typically at 5VS) combined with a wide bandwidth of 3MHz and very low noise (14nV/√Hz at 1kHz) make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. The low input bias current supports applications with MR source impedances. The robust design of the OPA314 device provides ease-of-use to the circuit designer, unity-gain stability with capacitive loads of up to 300pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions and high electrostatic discharge (ESD) protection (4kV HBM). This op-amp is optimized for low-voltage operation as low as 1.8V (±0.9V) and up to 5.5V (±2.75V) and are specified over the full extended temperature range of -40 to 125°C.
● 14nV/√Hz at 1kHz Low noise
● Internal RF/EMI filter
● Unity-gain stable
● 0.5mV Low offset voltage
● 0.2pA Low input bias current
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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