TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 15.0 V |
Operating Voltage | 4.5V ~ 18V |
Case/Package | PDIP-8 |
Supply Current | 7 mA |
Number of Circuits | 1 Circuit |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Power Dissipation | 1 W |
Common Mode Rejection Ratio | 106 dB |
Input Offset Drift | 400 nV/K |
Bandwidth | 16 MHz |
Slew Rate | 55.0 V/μs |
Gain Bandwidth Product | 16 MHz |
Input Offset Voltage | 40 µV |
Input Bias Current | 1 pA |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -25 ℃ |
Gain Bandwidth | 16 MHz |
Power Dissipation (Max) | 1000 mW |
Minimum CMRR Range | 106 dB |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 9.81 mm |
Size-Width | 6.35 mm |
Size-Height | 4.57 mm |
Operating Temperature | -25℃ ~ 85℃ |
The OPA627BP is a precision high-speed Difet® Operational Amplifier provides a new level of performance in a precision FET operational amplifier. When compared to the popular OPA111 operational amplifier, the OPA6x7 has lower noise, lower offset voltage and higher speed. The OPA6x7 is useful in a broad range of precision and high speed analogue circuitry. The OPA6x7 is fabricated on a high-speed, dielectrically-isolated complementary NPN/PNP process. It operates over a wide range of power supply voltage of ±4.5 to ±18V. Laser-trimmed Difet input circuitry provides high accuracy and low-noise performance comparable with the best bipolar-input operational amplifiers. High frequency complementary transistors allow increased circuit bandwidth, attaining dynamic performance not possible with previous precision FET operational amplifiers. The OPA627 is unity-gain stable. The OPA637 is stable in gains equal to or greater than five.
● 4.5nV/√Hz at 10kHz Very low noise
● 550ns to 0.01% Fast setting time
● 100µV Maximum low VOS
● 0.8µV/°C Maximum low drift
● 5pA Maximum low IB
● Unity-gain stable
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
TI
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