| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 30.0 V |
| Case/Package | DIP-4 |
| Output Voltage | 24.0 V |
| Forward Voltage | 1.7 V |
| Wavelength | 935 nm |
| Input Current | 20.0 mA |
| Peak Wavelength | 935 nm |
| Power Dissipation | 75 mW |
| Breakdown Voltage (Collector to Emitter) | 24 V |
| Forward Current | 20 mA |
| Reverse Breakdown Voltage | 2 V |
| Forward Current (Max) | 50 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 75 mW |
| Supply Voltage | 1.7 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Plastic |
| Size-Height | 4.70 mm |
| Operating Temperature | -40℃ ~ 85℃ |
| Housing Material | Plastic |
The OPB706A is a Reflective Object Sensor consist of an infrared light emitting diode (LED) and an NPN silicon phototransistor mounted "side-by-side" on parallel axes in a black plastic housing. The LED and phototransistor is moulded using dark infrared transmissive plastic to reduce ambient light noise. The phototransistor responds to light from the emitter when a reflective object passes within its field of view of the device.
● 935nm LED peak wavelength
● 0.05" Reflection distance
● Unfocused for sensing diffuse surface
● 75mW Power dissipation
● -40 to 85°C Operating temperature range
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