| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Supply Voltage (DC) | 5.00 V |
| Voltage Rating (DC) | 30.0 V |
| Operating Voltage | 5.00 V |
| Case/Package | TO-72 |
| Output Voltage | 30.0 V |
| Forward Voltage | 1.5 V |
| Wavelength | 935 nm |
| Input Current | 50.0 mA |
| Peak Wavelength | 935 nm |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Forward Current | 50 mA |
| Forward Current (Max) | 50 mA |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | 0 ℃ |
| Power Dissipation (Max) | 150 mW |
| Supply Voltage | 1.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | 0℃ ~ 70℃ |
The OPB710 is a Reflective Object Sensor that consists of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. On each sensor, the emitting diode and detector are mounted side-by-side on parallel axes. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly.
● Photodarlington output
● Unfocused for sensing diffuse surface
● Clear encapsulating epoxy
● Filtered to reduce the effect of visible or fluorescent light
TT Electronics/Optek Technology
4 Pages / 0.18 MByte
TT Electronics/Optek Technology
4 Pages / 0.91 MByte
TT Electronics/Optek Technology
1 Pages / 0.17 MByte
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