TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 30.0 V |
Operating Voltage | 1.50 V |
Case/Package | TO-72 |
Output Voltage | 30.0 V |
Number of Channels | 1 Channel |
Forward Voltage | 1.5 V |
Wavelength | 935 nm |
Input Current | 50.0 mA |
Peak Wavelength | 935 nm |
Power Dissipation | 150 mW |
Breakdown Voltage (Collector to Emitter) | 30 V |
Forward Current | 50 mA |
Reverse Breakdown Voltage | 3 V |
Forward Current (Max) | 50 mA |
Operating Temperature (Max) | 70 ℃ |
Operating Temperature (Min) | 0 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 5.46 mm |
Size-Width | 5.46 mm |
Size-Height | 3.68 mm |
The OPB710F series Reflective Object Sensor that consists of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. On each sensor, the emitting diode and detector are mounted side-by-side on parallel axes. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The OPB710F ("F" versions) have a filtering material added to the epoxy to reduce the effect of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly.
● Phototransistor output
● Unfocused for sensing diffuse surface
● Clear encapsulating epoxy
● Filtered to reduce the effect of visible or fluorescent light
TT Electronics/Optek Technology
4 Pages / 0.18 MByte
TT Electronics/Optek Technology
4 Pages / 0.91 MByte
TT Electronics/Optek Technology
Sensor; Reflective; Phototransistor; 3V Emitter; 30V Detector; 0.25W(1/4W); 25mA
TT Electronics Resistors
Diffuse Photoelectric Sensor, 6.35mm Min, 6.35mm Max, 0.15mA, 1-Channel, Round, Through Hole Mount, ROHS COMPLIANT, PLASTIC PACKAGE-2
TT Electronics/Optek Technology
Sensor; Reflective; Phototransistor; 2V Emitter; 30V Detector; 150mW; 25mA
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