| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Operating Voltage | 1.80 V |
| Case/Package | Pre-Wired |
| Number of Channels | 1 Channel |
| Power Dissipation | 100 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Forward Current | 50 mA |
| Forward Current (Max) | 50 mA |
| Operating Temperature (Max) | 80 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Size-Length | 30.73 mm |
| Size-Width | 6.48 mm |
| Size-Height | 19.3 mm |
| Operating Temperature | -40℃ ~ 85℃ |
Description
●The OPB816 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The deep slot allows for a longer reach of the optical center line from the mounting plane, .650” (16.51 mm).
●Features
●·.20”(5.08 mm) wide gap
●·24”minimum, 26 AWG wire leads .86” (21.8 mm) deep slot
●·Dust protection
TT Electronics/Optek Technology
2 Pages / 0.04 MByte
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