| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 36.0 V |
| Case/Package | PDIP-8 |
| Number of Positions | 8 Position |
| Wavelength | 650 nm |
| Peak Wavelength | 650 nm |
| Rise Time | 28000 ns |
| Bandwidth | 14 kHz |
| Fall Time | 28000 ns |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | 0 ℃ |
| Gain Bandwidth | 2 MHz |
| Supply Voltage | 2.7V ~ 36V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 9.53 mm |
| Size-Width | 6.52 mm |
| Size-Height | 3.24 mm |
| Operating Temperature | 0℃ ~ 70℃ |
The OPT101P is a 8-pin Monolithic Photodiode with on-chip trans-impedance amplifier. The integrated combination of photodiode and trans-impedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs, such as leakage current errors, noise pick-up and gain peaking as a result of stray capacitance. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power supply operation. The 0.09 x 0.09" (2.29 x 2.29mm) photodiode operates in the photoconductive mode for excellent linearity and low dark current. The OPT101P operates from 2.7 to 36V supplies and 120µA quiescent current.
● 2.7 to 36V Single Supply
● 0.090 x 0.090" Photodiode Size
● 1MR Internal Feedback Resistor
● 0.45A/W (650nm) High Responsivity
● 14kHz Bandwidth
● 120µA Low Quiescent Current
●Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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