Description
●The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
●General features
●■ High dv/dt and avalanche capabilities
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●Applications
●■ Switching application
ST Microelectronics
16 Pages / 0.32 MByte
ST Microelectronics
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
ETC
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
ST Microelectronics
N-channel 600V - 0.4Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh™ Power MOSFET (with fast diode)
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
ST Microelectronics
N-channel 600V - 0.4Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh™ Power MOSFET (with fast diode)
ST Microelectronics
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
ETC
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
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