| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 600 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Box |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The P2N2222AG is a NPN Silicon Bipolar Transistor, designed for use in linear and switching applications.
● Small Compact Surface Mountable Package with J-Bend Leads
● Rectangular Package for Automated Handling
● Highly Stable Oxide Passivated Junction
● Epoxy, Molded Case
● Lead and Mounting Surface Temperature for Soldering Purposes of 260 C Max. for 10 Seconds
● Notch in Plastic Body Indicates Cathode Lead Polarity
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.15 MByte
Microsemi
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4
ON Semiconductor
Amplifier Transistors(NPN Silicon)
Transys Electronics
NPN SILICON PLANAR SWITCHING TRANSISTORS
Continental Device
0.625W Switching NPN Plastic Leaded Transistor. 30V Vceo, 0.6A Ic, 35 hFE
M/A-Com
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
Cobham plc
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
