| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -600 mA |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Box |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92-3
ON Semiconductor
6 Pages / 0.19 MByte
ON Semiconductor
31 Pages / 0.08 MByte
Motorola
600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Continental Device
0.625W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, A Ic, 75 - hF
Microsemi
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN
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