P62NS04Z Datasheet PDF - ST Microelectronics

Description

●This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

●operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.

●■ 100% avalanche tested

●■ Low capacitance and gate charge

●■ 175°C maximum junction temperature