| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 0.3 W |
| Number of Positions | 3 Position |
| Power Dissipation | 300 mW |
| Gain Bandwidth Product | 30 MHz |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| hFE Min | 50 @500mA, 10V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBHV8115T is a 1A NPN breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● W6 Marking code
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