| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Power Rating | 0.52 W |
| Number of Positions | 3 Position |
| Power Dissipation | 520 mW |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| hFE Min | 100 @100mA, 10V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 220 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | 150℃ (TJ) |
The PBHV9115X is a 1A PNP breakthrough-in small signal (BISS) Transistor in a small and flat surface-mount plastic package. It offers collector pad for good heat transfer.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● 4G Marking code
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PBHV9115TLH - 150V, 1A PNP high-voltage low VCEsat BISS transistor
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