| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 700 mW |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| Continuous Collector Current | 1A |
| hFE Min | 100 |
| DC Current Gain (hFE) | 220 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.4 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.8 mm |
The PBHV9115Z is a 1A PNP breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● NPN complement is PBHV8115Z
● V9115Z Marking code
Nexperia
PBHV9115TLH - 150V, 1A PNP high-voltage low VCEsat BISS transistor
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