TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Power Rating | 0.7 W |
Number of Positions | 4 Position |
Power Dissipation | 700 mW |
Breakdown Voltage (Collector to Emitter) | 150 V |
hFE Min | 100 @100mA, 10V |
Input Power (Max) | 1.4 W |
DC Current Gain (hFE) | 220 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.4 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.8 mm |
Operating Temperature | 150℃ (TJ) |
The PBHV9115Z is a 1A PNP breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● NPN complement is PBHV8115Z
● V9115Z Marking code
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PBHV9115TLH - 150V, 1A PNP high-voltage low VCEsat BISS transistor
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