| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 110 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 0.7 W |
| Number of Positions | 4 Position |
| Power Dissipation | 2000 mW |
| Gain Bandwidth Product | 110 MHz |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 100 @2A, 2V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS306NZ,135 is a 5.1A NPN breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increased heat-sink.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● PNP complement is PBSS306PZ
● S306NZ Marking code
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