| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2 W |
| Number of Positions | 4 Position |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 100 @2A, 2V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS306PZ,135 is a 4.1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increases heat-sink.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Smaller printed-circuit board (PCB) area than for conventional transistors
● AEC-Q101 qualified
● NPN complement is PBSS306NZ
● S306PZ Marking code
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