| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 160 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 1.1 W |
| Number of Positions | 3 Position |
| Power Dissipation | 1.1 W |
| Rise Time | 55 ns |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 150 @1A, 2V |
| Input Power (Max) | 1.1 W |
| DC Current Gain (hFE) | 320 |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4032PT is a 2.4A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat
● Optimized switching time
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High energy efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● AEC-Q101 qualified
● NPN complement is PBSS4032NT
● BN Marking code
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