| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 0.3 W |
| Number of Positions | 3 Position |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| hFE Min | 300 @500mA, 2V |
| Input Power (Max) | 480 mW |
| DC Current Gain (hFE) | 280 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 480 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4120T,215 is a 1A NPN breakthrough-in small signal (BISS) Transistor in a plastic package provides ultra-low VCEsat and RCEsat parameters. It is suitable for use with the peripheral driver in low supply voltage applications and inductive load drivers.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High efficiency leading to less heat generation
● Reduced printed-circuit board requirements
● PNP complement is PBSS5120T
● 3B Marking code
Nexperia
7 Pages / 0.23 MByte
Nexperia
206 Pages / 0.21 MByte
Nexperia
16 Pages / 0.2 MByte
Nexperia
72 Pages / 3.63 MByte
Nexperia
Small Signal Bipolar Transistor
Philips
20V; 1A NPN low VCEsat (BISS) transistor
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