| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Power Rating | 0.55 W |
| Number of Positions | 3 Position |
| Power Dissipation | 1000 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 300 @1A, 2V |
| hFE Max | 300 @100mA, 2V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4250X,115 is a 2A NPN breakthrough-in small signal (BISS) Transistor in a plastic package. It offers die pad for good heat transfer.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability: IC and ICM
● Higher efficiency leading to less heat generation
● Reduced printed-circuit board requirements
● PNP complement is PBSS5250X
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