TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 0.3 W |
Number of Positions | 3 Position |
Power Dissipation | 1.2 W |
Breakdown Voltage (Collector to Emitter) | 20 V |
hFE Min | 220 @1A, 2V |
Input Power (Max) | 540 mW |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1200 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | 150℃ (TJ) |
The PBSS4320T is a NPN low VCEsat Transistor housed in a surface-mount plastic package. It is suitable for use with the linear voltage regulation with low voltage drop-out (LDO).
● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
● High collector current capability
● High collector current gain
● Improved efficiency due to reduced heat generation
● PNP complement is PBSS5320T
● ZG Marking code
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