| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Power Rating | 0.415 W |
| Number of Positions | 3 Position |
| Power Dissipation | 250 mW |
| Rise Time | 30 ns |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 150 @500mA, 5V |
| Input Power (Max) | 415 mW |
| DC Current Gain (hFE) | 350 |
| Fall Time | 55 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 415 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS5160U is a 1A PNP breakthrough-in small signal (BISS) Transistor in a very small surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● NPN complement is PBSS4160U
● 53 Marking code
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