| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 120 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2 W |
| Number of Positions | 4 Position |
| Power Dissipation | 2000 mW |
| Gain Bandwidth Product | 120 MHz |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| hFE Min | 150 @2A, 2V |
| hFE Max | 250 @500mA, 2V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 350 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS5540Z is a low VCEsat PNP Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
● Low collector-emitter saturation voltage
● High current capability
● Improved device reliability due to reduced heat generation
● NPN complement is PBSS4540Z
● PB5540 Marking code
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