| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 650 mW |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 1A |
| DC Current Gain (hFE) | 150 |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
The PBSS8110Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a surface-mount plastic package with increased heat-sink.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● PNP complement is PBSS9110Z
● PB8110 Marking code
Nexperia
Transistor: NPN; bipolar; 100V; 1A; 480mW; SOT23
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