| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 1A |
| hFE Min | 150 @500mA, 5V |
| hFE Max | 150 @1mA, 5V |
| Input Power (Max) | 480 mW |
| DC Current Gain (hFE) | 150 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 480 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS9110T,215 is a 1A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● Higher efficiency leading to less heat generation
● NPN complement is PBSS8110T
● U7 Marking code
NXP
206 Pages / 0.21 MByte
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