| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Power Rating | 2 W |
| Number of Positions | 3 Position |
| Power Dissipation | 550 mW |
| Rise Time | 60 ns |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 150 @500mA, 5V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 150 |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS9110X,135 is a 1A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High efficiency leading to less heat generation
● NPN complement is PBSS8110X
● 4C Marking code
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