General Description
●Micron"s 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology.
●Features
●• High-Performance Read, Program and Erase
● – 96 ns initial read access
● – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
● – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
● – 8-, 16-, and continuous-word synchronous-burst Reads
● – Programmable WAIT configuration
● – Customer-configurable output driver impedance
● – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
● – Block Erase: 0.9 s per block (typ)
● – 20 μs (typ) program/erase suspend
●• Architecture
● – 16-bit wide data bus
● – Multi-Level Cell Technology
● – Symmetrically-Blocked Array Architecture
● – 256-Kbyte Erase Blocks
● – 1-Gbit device: Eight 128-Mbit partitions
● – 512-Mbit device: Eight 64-Mbit partitions
● – 256-Mbit device: Eight 32-Mbit partitions
● – 128-Mbit device: Eight 16-Mbit partitions
● – Read-While-Program and Read-While-Erase
● – Status Register for partition/device status
● – Blank Check feature
●• Quality and Reliability
● – Expanded temperature: –30 °C to +85 °C
● – Minimum 100,000 erase cycles per block
● – 65nm Process Technology
●• Power
● – Core voltage: 1.7 V - 2.0 V
● – I/O voltage: 1.7 V - 2.0 V
● – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
● – Deep Power-Down mode: 2 μA (typ)
● – Automatic Power Savings mode
● – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
●• Software
● – Micron® Flash data integrator (FDI) optimized
● – Basic command set (BCS) and extended command set (ECS) compatible
● – Common Flash interface (CFI) capable
●• Security
● – One-time programmable (OTP) space
● 64 unique factory device identifier bits
● 2112 user-programmable OTP bits
● – Absolute write protection: VPP = GND
● – Power-transition erase/program lockout
● – Individual zero latency block locking
● – Individual block lock-down
●• Density and packaging
● – 128Mb, 256Mb, 512Mbit, and 1-Gbit
● – Address-data multiplexed and non-multiplexed interfaces
● – 64-Ball Easy BGA
