| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 500 MHz |
| Number of Pins | 3 Pin |
| Case/Package | PowerSO-10RF |
| Power Dissipation | 73000 mW |
| Drain to Source Voltage (Vds) | 25 V |
| Output Power | 8 W |
| Gain | 11.5 dB |
| Test Current | 150 mA |
| Input Capacitance (Ciss) | 91pF @7.5V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 73000 mW |
| Voltage Rating | 25 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -65℃ ~ 165℃ |
STMicroelectronics offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this PD54008S-E RF amplifier. Its maximum power dissipation is 73000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
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