| TYPE | DESCRIPTION |
|---|
| Frequency | 500 MHz |
| Number of Pins | 3 Pin |
| Case/Package | PowerSO-10 |
| Polarity | N-Channel |
| Power Dissipation | 31700 mW |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Output Power | 3 W |
| Gain | 17 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 36pF @12.5V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 31700 mW |
| Voltage Rating | 40 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
●HF to 2000 MHz Class AB Common Source - PowerSO-10RF
●VHF / UHF radio and digital cellular BTS applications
●HF to 2000MHz class AB common source - PowerFLAT
●VHF / UHF radio applications
●HF to 2000MHz class AB common cource - ceramic packages
●UHF TV and digital cellular BTS applications
●2 to 400MHz class AB common source N channel MOSFETs
●HF / SSB, FM / VHF broadband applications
●2 to 30MHz class AB linear, common emitter, HF / SSB
ST Microelectronics
19 Pages / 0.3 MByte
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