| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 945 MHz |
| Number of Pins | 3 Pin |
| Case/Package | PowerSO-10RF |
| Power Dissipation | 20000 mW |
| Drain to Source Voltage (Vds) | 65 V |
| Output Power | 6 W |
| Gain | 15 dB |
| Test Current | 70 mA |
| Input Capacitance (Ciss) | 27pF @28V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| Voltage Rating | 65 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 165℃ |
This PD57006STR-E RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 945 MHz. This N channel RF power MOSFET operates in enhancement mode.
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