| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 945 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 65.0 V |
| Current Rating | 4.00 A |
| Case/Package | PowerSO-10RF |
| Power Dissipation | 52800 mW |
| Drain to Source Voltage (Vds) | 65 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Output Power | 30 W |
| Gain | 14 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 57pF @28V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 52800 mW |
| Voltage Rating | 65 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -65℃ ~ 165℃ |
If you"re looking for a MOSFET that is compatible with radio frequency environments, this PD57030S-E RF amplifier from STMicroelectronics is for you! Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz.
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