| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 250 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 100 |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PDTA123JT is a 2.2 to 47kR PNP Resistor Equipped Transistor (RET) in a small surface-mount plastic package.
● Reduces component count
● Built-in bias resistors
● Reduces pick and place costs
● Simplifies circuit design
● AEC-Q101 qualified
● NPN complement is PDTC123JT
● 23 Marking code
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PNP resistor-equipped transistors; R1 = 2.2K, R2 = 47K
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