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PHE13009/DG,127
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PHE13009/DG,127 Datasheet PDF - We En Semiconductor

Manufacturer:We En Semiconductor
Category:BJTs
Case Package:TO-220-3
Description:TO-220AB NPN 400V 12A
Documentation:PHE13009/DG,127 Datasheet (8 Pages)Pinout Diagram on2 PageHot
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PHE13009/DG,127 Datasheet PDF (8 Pages)
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PHE13009/DG,127 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
PolarityNPN
Breakdown Voltage (Collector to Emitter)400 V
Continuous Collector Current12A
hFE Min8 @5A, 5V
Input Power (Max)80 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)80000 mW
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PHE13009/DG,127 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingRail
MaterialSilicon
Operating Temperature150℃ (TJ)
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PHE13009/DG,127 Documents

PHE13009/DG,127 Datasheet
We En Semiconductor
8 Pages / 0.12 MByte
PHE13009/DG,127 Other Datasheet PDF
We En Semiconductor
22 Pages / 0.32 MByte

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