| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-223 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Power Dissipation | 8.3 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 55 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
The PHT6N06LT is a 55V logic level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and electrostatically robust due to integrated protection diodes. Suitable for use in DC to DC converters and general purpose switching applications.
● 150°C Junction temperature
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