| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Power Dissipation | 8.3 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 55 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
The PHT6N06T is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ technology. It is suitable for use in DC to DC converters and general purpose switch applications.
● Low ON-state resistance
● Low QGD
● Fast switching
● Surface-mount package
● -55 to 150°C Junction temperature range
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