| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 633 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 633pF @25V(Vds) |
| Input Power (Max) | 8.3 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The PHT6NQ10T is a 100V standard level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and higher operating power due to low thermal resistance. Suitable for use in DC to DC converters, motor and relay drivers applications.
● 150°C Junction temperature
● Suitable for high frequency applications due to fast switching characteristics
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