| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-236 |
| Polarity | N-Channel |
| Power Dissipation | 830 mW |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 300 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed andbline transformer drivers. FEATURES • Direct interface to C-MOS,TTL,etc. • High-speed switching • No secondary breakdown
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