| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Breakdown Voltage | 30.0 V |
| Drain to Source Resistance (on) (Rds) | 300 Ω |
| Power Dissipation | 300 mW |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | 30 V |
| Reverse Breakdown Voltage | 30 V |
| Input Capacitance (Ciss) | 8pF @10V(Vgs) |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
This PMBFJ177,215 JFET transistor from NXP Semiconductors is an uni-polar voltage-controlled device that has a very high input electrical resistance. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This junction field effect transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
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