| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 500 V |
| Continuous Collector Current | 0.15A |
| hFE Min | 50 |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.1 mm |
The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module, LCD backlighting, flyback converters and SMPS applications.
● Complement to the PBHV9050T
● AEC-Q101 qualified
● 150°C Junction temperature
● High collector current capability
● High collector current gain
● High voltage
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