TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SOT-6 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.032 Ω |
Power Dissipation | 1.17 W |
Threshold Voltage | 650 mV |
Input Capacitance | 660 pF |
Drain to Source Voltage (Vds) | 20 V |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 660pF @10V(Vds) |
Input Power (Max) | 490 mW |
Fall Time | 16 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1170 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMDPB30XN is a dual N-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
● Very fast switching characteristics
● Exposed drain pad for excellent thermal conduction
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