| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | uDFN-6 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Power Dissipation | 1.17 W |
| Threshold Voltage | 650 mV |
| Input Capacitance | 785 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 785pF @10V(Vds) |
| Input Power (Max) | 490 mW |
| Fall Time | 68 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 490 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMDPB55XP is a dual P-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
● Very fast switching characteristics
● Exposed drain pad for excellent thermal conduction
Nexperia
15 Pages / 1.58 MByte
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MOSFET Transistor, Dual P Channel, -4.5A, -20V, 0.055Ω, -4.5V, -650mV
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