| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-666 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.29 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 750 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 0.8A |
| Input Capacitance (Ciss) | 55pF @10V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.09 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 1.7 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.6 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The PMDT290UNE is a dual N-channel enhancement-mode FET in an ultra small and flat lead surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Very fast switching characteristics
● ESD protection up to 2kV
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