| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-666 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.67 Ω |
| Polarity | Dual P-Channel |
| Power Dissipation | 500 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Operating Temperature | -55℃ ~ 150℃ |
The PMDT670UPE is a dual P-channel enhancement-mode FET in an ultra small and flat lead surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Very fast switching characteristics
● ESD protection up to 2kV
Nexperia
MOSFET 2P-CH 20V 0.55A SOT666
NXP
NXP PMDT670UPE Dual MOSFET, Dual P Channel, -550mA, -20V, 0.67Ω, -4.5V, -800mV
NXP
Trans MOSFET P-CH 20V 0.55A 6Pin SOT-666 T/R
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