| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-363 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 0.49A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Dual N-channel Trench MOS standard level FET Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS technology. Features Surface mounted package Footprint 40% smaller than SOT23 Standard level threshold voltage Fast switching Low on-state resistance Dual device. Applications Driver circuits Switching in portable appliances
Nexperia
MOSFET 2N-CH 60V 0.49A 6TSSOP
Nexperia
Transistor: N-MOSFET x2; unipolar; 60V; 310mA; 410mW; SOT363
Nexperia
Trans MOSFET N-CH 60V 0.49A 6Pin TSSOP
Philips
Dual N-channel mTrenchMOS standard level FET
NXP
PMGD780SN - Dual N-channel TrenchMOS standard level FET
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