| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 200 mW |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 125 mA |
| Rise Time | 7 ns |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -55℃ ~ 150℃ |
Dual Trench MOS logic level FET Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS technology. Features Trench MOS technology Very fast switching Logic level compatible Subminiature surface mount package Applications Battery management High-speed switch Low power DC-to-DC converter.
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