| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-457 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Power Dissipation | 530 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Operating Temperature (Max) | 150 ℃ |
The PMN25UN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Low threshold voltage
● Very fast switching
● -55 to 150°C Junction temperature range
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