| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-457 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.027 Ω |
| Polarity | P-Channel |
| Power Dissipation | 540 mW |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 5.7A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 6.25 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 3.1 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The PMN27UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
● 1.8V RDS (ON) rated
● Very fast switching
● -55 to 150°C Junction temperature range
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Transistor: P-MOSFET; unipolar; -20V; -5.7A; 540mW; SOT457
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MOSFET, P CH, 20V, 5.7A, SOT457; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.7A; Drain Source...
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